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Explore performance details, construction highlights, applications, and technical information in one clear overview.
PB series General Purpose Photo Sensor is a Hanyoung NUX photoelectric sensor for non-contact detection and machine sensing. The configuration is defined by its sensing method, sensing range, output arrangement and electrical requirements, with model information of NPN | PB- T7N | PB- T10RN | PB- T15N | PB- M3RN. Sensing mode: Through-beam | Retroreflective (mirror); Sensing distance: 7 m | 10 m | 15 m | 0.1 - 3 m (Note 1); Hysteresis distance: ─; Sensing mode: Diffuse-reflective | Distancesettable.
The sensing distance, target object, response time, output type and environmental limits are the key details to compare when selecting the sensor for a specific machine or detection point. Light source (wavelength): IR (860nm) | RED (640nm) | IR (860nm) | RED (640nm); Light source (wavelength): IR (860nm) | RED (640nm) | IR (860nm); Display: PC; Operation mode: Light ON / Dark ON switch.
Key strengths of the PB series General Purpose Photo Sensor come from the combination of its functional configuration and practical installation specifications. The following characteristics highlight the values that matter most when comparing the product with equipment requirements.
Sensing mode: Through-beam | Retroreflective (mirror); Sensing distance: 7 m | 10 m | 15 m | 0.1 - 3 m (Note 1); Power voltage: 12 - 24 V d.c. ±10 % (Ripple max. 10 %); Control output: NPN or PNP open collector output ▪Load current - max. 100 mA (26.4 V d.c. standard) ▪Residual voltage - NPN: max. 1 V, PNP : max. 1 V; Response time: 1 ms or less.
The PB series General Purpose Photo Sensor technical profile is centred on sensing method, detection range, target characteristics, output behaviour and response time. These parameters define the sensor's operating window and electrical interface. Sensing distance: 100 mm | 400 mm | 1 m | 400 mm; Hysteresis distance: 20 % or less of detection distance; Control output: NPN or PNP open collector output â–ªLoad current - max. 100 mA (26.4 V d.c. standard) â–ªResidual voltage - NPN: max. 1 V, PNP : max. 1 V; Response time: 1 ms or less.
Additional technical characteristics include Current consumption: Emitter: max. 20 mA Receiver: max. 20 mA | Max. 30 mA; Current consumption: Max. 30 mA; Power voltage: 12 - 24 V d.c. ±10 % (Ripple max. 10 %).
The physical design of PB series General Purpose Photo Sensor should be considered together with the installation environment and the available mounting or display arrangement. Weight: Approximately 90g | Approximately 60g; Weight: Approximately 50g; Material: Case | PBT GF30 %; Lens: PC.
Further construction and environmental details include Insulation Resistance: More than 20 MΩ (500 V d.c. mega); Noise immunity: Square wave noise by noise simulator (pulse width 1 μs) ± 240 V; Dielectric strength: 1,000 V a.c. (50/60 Hz for 1 minute).
Integration of PB series General Purpose Photo Sensor starts with matching its sensing method, supply voltage, output type and connection method to the control system. Sensing mode: Through-beam | Retroreflective (mirror); Sensing distance: 7 m | 10 m | 15 m | 0.1 - 3 m (Note 1); Power voltage: 12 - 24 V d.c. ±10 % (Ripple max. 10 %); Control output: NPN or PNP open collector output ▪Load current - max. 100 mA (26.4 V d.c. standard) ▪Residual voltage - NPN: max. 1 V, PNP : max. 1 V.
Additional operating and interface details include Response time: 1 ms or less; Degree of protection: IP65 (IEC standard); Light source (wavelength): IR (860nm) | RED (640nm) | IR (860nm) | RED (640nm). These values provide a practical reference for wiring, setup and normal operation within the selected configuration.
Choose PB series General Purpose Photo Sensor by confirming the exact model or configuration against the required operating conditions. The available model information is NPN | PB- T7N | PB- T10RN | PB- T15N | PB- M3RN. Model: NPN | PB- T7N | PB- T10RN | PB- T15N | PB- M3RN; Model: NPN | PB- R01N | PB- R04RN | PB- R1N | PB- D04N; Vibration resistance: 10 - 55 Hz, Double amplitude : 1.5 mm, X·Y·Z 2 in each direction for 2 hours; Shock resistance: 500 m/s², X·Y·Z each direction 3 times.
Before installation, confirm Ambient temperature: ▪During operation : -25 ~ +55 ℃, During storage : -40 ~ +70 ℃ (Without condensation or icing); Ambient humidity: ▪35 ~ 85 % RH (Without condensation); Degree of protection: IP65 (IEC standard). Matching the model, electrical ratings, signal requirements, physical arrangement and environmental limits helps keep the product within its specified operating conditions.
| Specification | Details |
|---|---|
| Model | NPN | PB- T7N | PB- T10RN | PB- T15N | PB- M3RN |
| PNP | PB- T7P | PB- T10RP | PB- T15P | PB- M3RP |
| Sensing mode | Through-beam | Retroreflective (mirror) |
| Sensing distance | 7 m | 10 m | 15 m | 0.1 - 3 m (Note 1) |
| Hysteresis distance | ─ |
| Detecting object | Opaque Ø12 mm or more | Ø60 mm more (Opaque) |
| Light source (wavelength) | IR (860nm) | RED (640nm) | IR (860nm) | RED (640nm) |
| Current consumption | Emitter: max. 20 mA Receiver: max. 20 mA | Max. 30 mA |
| Protec tion circuit | Common | â–ªPower reverse connection protection, â–ªOutput reverse connection protection, â–ªOutput short-circuit over-current protection, â–ªOutput short-circuit alarm (Note 2) |
| Individual | ─ | Mutual interference prevention function |
| Acce ssory | Common | Brackets A, volt (M3 X 12 mm), Volume driver |
| Individual | ─ | Mirror (HY-M5) |
| Optional | Brackets B, Brackets C, Mirror (HY-M5S) |
| Weight | Approximately 90g | Approximately 60g |
| Model | NPN | PB- R01N | PB- R04RN | PB- R1N | PB- D04N |
| PNP | PB- R01P | PB- R04RP | PB- R1P | PB- D04P |
| Sensing mode | Diffuse-reflective | Distancesettable |
| Sensing distance | 100 mm | 400 mm | 1 m | 400 mm |
| Hysteresis distance | 20 % or less of detection distance |
| Detecting object | White non-glossy paper (100 x 100 mm) |
| Light source (wavelength) | IR (860nm) | RED (640nm) | IR (860nm) |
| Current consumption | Max. 30 mA |
| Individual | Mutual interference prevention function |
| Individual | ─ |
| Weight | Approximately 50g |
| Power voltage | 12 - 24 V d.c. ±10 % (Ripple max. 10 %) |
| Control output | NPN or PNP open collector output â–ªLoad current - max. 100 mA (26.4 V d.c. standard) â–ªResidual voltage - NPN: max. 1 V, PNP : max. 1 V |
| Operation mode | Light ON / Dark ON switch |
| Response time | 1 ms or less |
| Insulation Resistance | More than 20 MΩ (500 V d.c. mega) |
| Noise immunity | Square wave noise by noise simulator (pulse width 1 μs) ± 240 V |
| Dielectric strength | 1,000 V a.c. (50/60 Hz for 1 minute) |
| Vibration resistance | 10 - 55 Hz, Double amplitude : 1.5 mm, X·Y·Z 2 in each direction for 2 hours |
| Shock resistance | 500 m/s², X·Y·Z each direction 3 times |
| Ambient illumination | â–ªSunlight : max. 11,000 lx / Incandescent : max 3,000 lx |
| Ambient temperature | ▪During operation : -25 ~ +55 ℃, During storage : -40 ~ +70 ℃ (Without condensation or icing) |
| Ambient humidity | â–ª35 ~ 85 % RH (Without condensation) |
| Degree of protection | IP65 (IEC standard) |
| Material | Case | PBT GF30 % |
| Display | PC |
| Lens | PC |
| No | Type | Category | Title | File |
| 1 | Manual > Instruction Manual | Photoelectric Sensor | PB series Instruction manual |
| 1 | CAD > 2D | Photoelectric Sensor | PB series (2D) |
| 2 | CAD > 3D | Photoelectric Sensor | PB series (3D) |
| No | Mark | Category | Title | File |
| 1 | Certification > CE | Photoelectric Sensor | PB series (EMC) |
| â–ªResidual voltage - NPN | max. 1 V, PNP : max. 1 V |
| 10 - 55 Hz, Double amplitude | 1.5 mm, X·Y·Z 2 in each direction for 2 hours |
| ▪During operation | -25 ~ +55 ℃, During storage : -40 ~ +70 ℃ (Without condensation or icing) |
| (Note 2) Red LED flashes in case of overload. (ON Time | 200 ㎲, OFF Time: 40 ㎲) |
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