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It uses Emitter sensing.
The sensing principle is Emitter. The optical emission is Infrared (880 nm).
The operating voltage is 12-24Vcc, with load current of ≤100 mA. No-load supply current is 100 mA and leakage current is limited to 10 µA.
Maximum ripple is ≤ 10%. Reverse polarity protection is Yes. Surge protection is Yes.
Ingress protection is rated IP67.
The housing is PBT, while the active head uses PC. Dimensions are 60 mm x 132 mm x 30 mm.
Weight is 260 … 300 g.
Tightening torque is 25 nm.
The operating temperature range is -25 °C…+50 °C (Non-freezing).
Storage temperature is -40 °C…+80 °C.
Sensitivity adjustment is Yes.
The manufacturer part number is BX80S/30-1H. This model is manufactured by M.D. Micro Detectors. Number of beams is 12.
Controlled height is 70 mm. Time to availability is 500 ms.
BX80S/30-1H uses Emitter sensing. For electrical integration, it provides operating voltage 12-24Vcc. The physical configuration includes PBT housing, dimensions 60 mm x 132 mm x 30 mm. It is rated IP67 for an operating temperature range of -25 °C…+50 °C (Non-freezing).
| Specification | Details |
|---|---|
| Model | BX80S/30-1H |
| Manufacturer part number | BX80S/30-1H |
| Manufacturer | M.D. Micro Detectors |
| Weight | 260 … 300 g |
| Active head material | PC |
| Housing material | PBT |
| Tightening torque | 25 nm |
| Operating temperature | -25 °C…+50 °C (Non-freezing) |
| Dimensions | 60 mm x 132 mm x 30 mm |
| Storage temperature | -40 °C…+80 °C |
| Operating principle | Emitter |
| Number of beams | 12 |
| Controlled height | 70 mm |
| Sensitivity adjustment | Yes |
| Thermal drift Sr | ≤10% |
| Degree of protection | IP67 |
| Time to availability | 500 ms |
| Reverse polarity protection | Yes |
| Surge protection | Yes |
| Maximum ripple | ≤ 10% |
| Operating voltage | 12-24Vcc |
| Load current | ≤100 mA |
| No-load supply current | 100 mA |
| Leakage current | 10 µA |
| Emission | Infrared (880 nm) |
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